All MOSFET. RU5H18Q Datasheet

 

RU5H18Q Datasheet and Replacement


   Type Designator: RU5H18Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-247
 

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RU5H18Q Datasheet (PDF)

 ..1. Size:283K  ruichips
 ru5h18q.pdf pdf_icon

RU5H18Q

RU5H18QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/18A,RDS (ON) =0.27 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability 100% avalanche tested TO-247 Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum

 9.1. Size:319K  ruichips
 ru5h13r.pdf pdf_icon

RU5H18Q

RU5H13RN-Channel Advanced Power MOSFETFeatures Pin Description 500V/13A, RDS (ON) =420m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High efficiency switch mode power supplies LightingGSN-Channel MOSFETAbsolute Maximum Rati

Datasheet: RU40S4H , RU4H10P , RU4H10R , RU55111R , RU55200Q , RU55L18L , RU55L18R , RU5H13R , RU6888R , RU5H5L , RU5H5P , RU5H5R , RU5H8P , RU5H8R , RU60100R , RU60101R , RU60120R .

History: RU30P4B | RU30P3B | SWD5N65K | SFP730 | SSM9971GJ | IRF7389PBF

Keywords - RU5H18Q MOSFET datasheet

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