RU5H18Q Specs and Replacement

Type Designator: RU5H18Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO-247

RU5H18Q substitution

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RU5H18Q datasheet

 ..1. Size:283K  ruichips
 ru5h18q.pdf pdf_icon

RU5H18Q

RU5H18Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 500V/18A, RDS (ON) =0.27 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability 100% avalanche tested TO-247 Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximum ... See More ⇒

 9.1. Size:319K  ruichips
 ru5h13r.pdf pdf_icon

RU5H18Q

RU5H13R N-Channel Advanced Power MOSFET Features Pin Description 500V/13A, RDS (ON) =420m (Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High efficiency switch mode power supplies Lighting G S N-Channel MOSFET Absolute Maximum Rati... See More ⇒

Detailed specifications: RU40S4H, RU4H10P, RU4H10R, RU55111R, RU55200Q, RU55L18L, RU55L18R, RU5H13R, AO3400A, RU5H5L, RU5H5P, RU5H5R, RU5H8P, RU5H8R, RU60100R, RU60101R, RU60120R

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