All MOSFET. RU5H8P Datasheet

 

RU5H8P Datasheet and Replacement


   Type Designator: RU5H8P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220F
 

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RU5H8P Datasheet (PDF)

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RU5H8P

RU5H8PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/8A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum R

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RU5H8P

RU5H8RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description500V/8A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Ra

Datasheet: RU55200Q , RU55L18L , RU55L18R , RU5H13R , RU5H18Q , RU5H5L , RU5H5P , RU5H5R , MMIS60R580P , RU5H8R , RU60100R , RU60101R , RU60120R , RU60190R , RU60200R , RU602B , RU60450Q .

History: MX2N4860 | NP82N04NLG | APM9968C | MX2N4091 | NTTFS4C02N | BSO303SPH | MEM2306S

Keywords - RU5H8P MOSFET datasheet

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