RU5H8P Specs and Replacement

Type Designator: RU5H8P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

RU5H8P substitution

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RU5H8P datasheet

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 ru5h8p.pdf pdf_icon

RU5H8P

RU5H8P N-Channel Advanced Power MOSFET MOSFET Features Pin Description 500V/8A, RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability 100% avalanche tested TO-220F Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximum R... See More ⇒

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 ru5h8r.pdf pdf_icon

RU5H8P

RU5H8R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 500V/8A, RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 26pF) Extremely high dv/dt capability TO-220 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximum Ra... See More ⇒

Detailed specifications: RU55200Q, RU55L18L, RU55L18R, RU5H13R, RU5H18Q, RU5H5L, RU5H5P, RU5H5R, 7N60, RU5H8R, RU60100R, RU60101R, RU60120R, RU60190R, RU60200R, RU602B, RU60450Q

Keywords - RU5H8P MOSFET specs

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