All MOSFET. RU60200R Datasheet

 

RU60200R Datasheet and Replacement


   Type Designator: RU60200R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 230 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220
 

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RU60200R Datasheet (PDF)

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RU60200R

RU60200RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/230A,RDS (ON) =2.5m (Typ.) VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inver

 9.1. Size:322K  ruichips
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RU60200R

RU602BN-Channel Advanced Power MOSFETFeatures Pin Description 60V/1.5A, RDS (ON) =220m(Typ.)@VGS=10VD Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23DApplications DC/DC Converter Battery SwitchGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rati

Datasheet: RU5H5P , RU5H5R , RU5H8P , RU5H8R , RU60100R , RU60101R , RU60120R , RU60190R , IRFB7545 , RU602B , RU60450Q , RU6050L , RU6050R , RU6050S , RU6051K , RU6055L , RU6055R .

History: WMN36N65C4 | LSD60R380HT | VSE007N04MS-G | WMN80R1K5S | LSD65R570GT | WMK220N20HG3

Keywords - RU60200R MOSFET datasheet

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