RU602B Datasheet and Replacement
Type Designator: RU602B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT-23
RU602B substitution
RU602B Datasheet (PDF)
ru602b.pdf
RU602BN-Channel Advanced Power MOSFETFeatures Pin Description 60V/1.5A, RDS (ON) =220m(Typ.)@VGS=10VD Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSSOT23DApplications DC/DC Converter Battery SwitchGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rati
ru60200r.pdf
RU60200RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/230A,RDS (ON) =2.5m (Typ.) VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inver
Datasheet: RU5H5R , RU5H8P , RU5H8R , RU60100R , RU60101R , RU60120R , RU60190R , RU60200R , EMB04N03H , RU60450Q , RU6050L , RU6050R , RU6050S , RU6051K , RU6055L , RU6055R , RU6055S .
Keywords - RU602B MOSFET datasheet
RU602B cross reference
RU602B equivalent finder
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History: RU30E30L | SWD4N65DD
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