RU602B Specs and Replacement
Type Designator: RU602B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 26 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT-23
RU602B substitution
- MOSFET ⓘ Cross-Reference Search
RU602B datasheet
ru602b.pdf
RU602B N-Channel Advanced Power MOSFET Features Pin Description 60V/1.5A, RDS (ON) =220m (Typ.)@VGS=10V D Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23 D Applications DC/DC Converter Battery Switch G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rati... See More ⇒
ru60200r.pdf
RU60200R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/230A, RDS (ON) =2.5m (Typ.) VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inver... See More ⇒
Detailed specifications: RU5H5R, RU5H8P, RU5H8R, RU60100R, RU60101R, RU60120R, RU60190R, RU60200R, AON7403, RU60450Q, RU6050L, RU6050R, RU6050S, RU6051K, RU6055L, RU6055R, RU6055S
Keywords - RU602B MOSFET specs
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