RU60450Q MOSFET. Datasheet pdf. Equivalent
Type Designator: RU60450Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 450 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO-247
RU60450Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU60450Q Datasheet (PDF)
ru60450q.pdf
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RU60450QN-Channel Advanced Power MOSFETFeatures Pin Description 60V/450A, RDS (ON) =1.3m(Typ.)@VGS=10V Ultra Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplicationsSwitching Appl
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