RU60450Q Specs and Replacement

Type Designator: RU60450Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 450 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 230 nS

Cossⓘ - Output Capacitance: 1450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO-247

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RU60450Q datasheet

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RU60450Q

RU60450Q N-Channel Advanced Power MOSFET Features Pin Description 60V/450A, RDS (ON) =1.3m (Typ.)@VGS=10V Ultra Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications Switching Appl... See More ⇒

Detailed specifications: RU5H8P, RU5H8R, RU60100R, RU60101R, RU60120R, RU60190R, RU60200R, RU602B, K2611, RU6050L, RU6050R, RU6050S, RU6051K, RU6055L, RU6055R, RU6055S, RU6070L

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