RU60450Q Datasheet and Replacement
Type Designator: RU60450Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 450 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO-247
RU60450Q substitution
RU60450Q Datasheet (PDF)
ru60450q.pdf

RU60450QN-Channel Advanced Power MOSFETFeatures Pin Description 60V/450A, RDS (ON) =1.3m(Typ.)@VGS=10V Ultra Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplicationsSwitching Appl
Datasheet: RU5H8P , RU5H8R , RU60100R , RU60101R , RU60120R , RU60190R , RU60200R , RU602B , IRFZ48N , RU6050L , RU6050R , RU6050S , RU6051K , RU6055L , RU6055R , RU6055S , RU6070L .
History: TK4A60DA | TK50P04M1 | BSP100 | SDF044JAB-S | WMJ10N80D1 | WMJ12N105C2 | BSC059N03SG
Keywords - RU60450Q MOSFET datasheet
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History: TK4A60DA | TK50P04M1 | BSP100 | SDF044JAB-S | WMJ10N80D1 | WMJ12N105C2 | BSC059N03SG



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