All MOSFET. RU60450Q Datasheet

 

RU60450Q Datasheet and Replacement


   Type Designator: RU60450Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 450 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO-247
 

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RU60450Q Datasheet (PDF)

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RU60450Q

RU60450QN-Channel Advanced Power MOSFETFeatures Pin Description 60V/450A, RDS (ON) =1.3m(Typ.)@VGS=10V Ultra Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplicationsSwitching Appl

Datasheet: RU5H8P , RU5H8R , RU60100R , RU60101R , RU60120R , RU60190R , RU60200R , RU602B , K2611 , RU6050L , RU6050R , RU6050S , RU6051K , RU6055L , RU6055R , RU6055S , RU6070L .

History: IRF9151

Keywords - RU60450Q MOSFET datasheet

 RU60450Q cross reference
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