All MOSFET. RU6080L Datasheet

 

RU6080L Datasheet and Replacement


   Type Designator: RU6080L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252
 

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RU6080L Datasheet (PDF)

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RU6080L

RU6080LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/80A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications SMPS High Speed Power SwitchingN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (

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 ru6085h.pdf pdf_icon

RU6080L

RU6085HN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6m(Typ.)@VGS=10V RDS (ON) =6.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed Lead Free and Green Devices Available (RoHS Compliant)SOP-8Applications Power Management. Switch Applications. Load switchN-Channel MO

Datasheet: RU6050R , RU6050S , RU6051K , RU6055L , RU6055R , RU6055S , RU6070L , RU6075R , IRFZ44N , RU6099R , RU6099S , RU60C20R5 , RU60D5H , RU60E16L , RU60E16R , RU60E25L , RU60E25R .

Keywords - RU6080L MOSFET datasheet

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