RU6099R Specs and Replacement
Type Designator: RU6099R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-220
RU6099R substitution
- MOSFET ⓘ Cross-Reference Search
RU6099R datasheet
ru6099r.pdf
RU6099R N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems ... See More ⇒
ru6099s.pdf
RU6099S N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m(Typ.) @VGS=10V D Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Available S TO263 D Applications Switching Application Systems Inverter... See More ⇒
Detailed specifications: RU6050S, RU6051K, RU6055L, RU6055R, RU6055S, RU6070L, RU6075R, RU6080L, IRF3205, RU6099S, RU60C20R5, RU60D5H, RU60E16L, RU60E16R, RU60E25L, RU60E25R, RU60E5D
Keywords - RU6099R MOSFET specs
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