All MOSFET. RU6099R Datasheet

 

RU6099R Datasheet and Replacement


   Type Designator: RU6099R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-220
 

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RU6099R Datasheet (PDF)

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RU6099R

RU6099R N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems

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 ru6099s.pdf pdf_icon

RU6099R

RU6099SN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =6m(Typ.) @VGS=10VD Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureG Lead Free and Green AvailableSTO263DApplications Switching Application Systems Inverter

Datasheet: RU6050S , RU6051K , RU6055L , RU6055R , RU6055S , RU6070L , RU6075R , RU6080L , IRF3205 , RU6099S , RU60C20R5 , RU60D5H , RU60E16L , RU60E16R , RU60E25L , RU60E25R , RU60E5D .

History: NCEP072N10A | SIZ704DT

Keywords - RU6099R MOSFET datasheet

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