All MOSFET. RU6099R Datasheet

 

RU6099R Datasheet and Replacement


   Type Designator: RU6099R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-220
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RU6099R Datasheet (PDF)

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RU6099R

RU6099R N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =6m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems

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RU6099R

RU6099SN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =6m(Typ.) @VGS=10VD Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating TemperatureG Lead Free and Green AvailableSTO263DApplications Switching Application Systems Inverter

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History: TSA20N50M | APT10021JFLL | SSW65R190S2 | SM4186T9RL | NCE30P12BS | WMM07N65C4 | NP180N04TUJ

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