RU60C20R5 MOSFET. Datasheet pdf. Equivalent
Type Designator: RU60C20R5
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-220-5
RU60C20R5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU60C20R5 Datasheet (PDF)
ru60c20r5.pdf
RU60C20R5Complementary Advanced Power MOSFETFeatures Pin Description N-Channel60V/20A,RDS (ON) =30m(Typ.) @ VGS=10V D1/D2 P-Channel-60V/-15A,R =110m (Typ) @VGS=-10VRDS (ON) =110m (Typ.) @ V = 10V Reliable and Rugged ESD ProtectedS2 Lead Free and Green AvailableG2G1S1TO220-5D2/D1D2/D1D2/D1D2/D1D2/D1D2/D1D2/D1Applicationspp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFA14N60P3
History: IXFA14N60P3
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918