All MOSFET. RU60C20R5 Datasheet


RU60C20R5 MOSFET. Datasheet pdf. Equivalent

Type Designator: RU60C20R5

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 285 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: TO-220-5

RU60C20R5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


RU60C20R5 Datasheet (PDF)

1.1. ru60c20r5.pdf Size:481K _ruichips


RU60C20R5 Complementary Advanced Power MOSFET Features Pin Description • N-Channel 60V/20A, RDS (ON) =30mΩ(Typ.) @ VGS=10V D1/D2 • P-Channel -60V/-15A, R =110mΩ (Typ) @VGS=-10V RDS (ON) =110mΩ (Typ.) @ V = 10V • Reliable and Rugged • ESD Protected S2 • Lead Free and Green Available G2 G1S1 TO220-5 D2/D1 D2/D1 D2/D1 D2/D1 D2/D1 D2/D1 D2/D1 Applications pp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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