RU60C20R5 Datasheet and Replacement

   Type Designator: RU60C20R5
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220-5
      - MOSFET Cross-Reference Search