All MOSFET. RU60D5H Datasheet

 

RU60D5H Datasheet and Replacement


   Type Designator: RU60D5H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8
 

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RU60D5H Datasheet (PDF)

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RU60D5H

RU60D5HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/5.4A,RDS (ON) =32m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Load Switch DC/DC ConverterDual N-Channel MOSFETAbsolute Maximum R

Datasheet: RU6055R , RU6055S , RU6070L , RU6075R , RU6080L , RU6099R , RU6099S , RU60C20R5 , 20N60 , RU60E16L , RU60E16R , RU60E25L , RU60E25R , RU60E5D , RU60E5H , RU60E6D , RU60E6H .

History: IRFR3711ZC | STB270N4F3

Keywords - RU60D5H MOSFET datasheet

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