RU60D5H Specs and Replacement
Type Designator: RU60D5H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP-8
RU60D5H substitution
- MOSFET ⓘ Cross-Reference Search
RU60D5H datasheet
ru60d5h.pdf
RU60D5H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/5.4A, RDS (ON) =32m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Power Management Load Switch DC/DC Converter Dual N-Channel MOSFET Absolute Maximum R... See More ⇒
Detailed specifications: RU6055R, RU6055S, RU6070L, RU6075R, RU6080L, RU6099R, RU6099S, RU60C20R5, 20N60, RU60E16L, RU60E16R, RU60E25L, RU60E25R, RU60E5D, RU60E5H, RU60E6D, RU60E6H
Keywords - RU60D5H MOSFET specs
RU60D5H cross reference
RU60D5H equivalent finder
RU60D5H pdf lookup
RU60D5H substitution
RU60D5H replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
