All MOSFET. RU60P60R Datasheet

 

RU60P60R Datasheet and Replacement


   Type Designator: RU60P60R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 94 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-220
 

 RU60P60R substitution

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RU60P60R Datasheet (PDF)

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RU60P60R

RU60P60RP-Channel Advanced Power MOSFETFeatures Pin Description -60V/-60A, RDS (ON) =22m(Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplicationsInvertersGSP-

Datasheet: RU60E16L , RU60E16R , RU60E25L , RU60E25R , RU60E5D , RU60E5H , RU60E6D , RU60E6H , IRF640N , RU6199Q , RU6199R , RU65120R , RU6581L , RU6581R , RU6881R , RU6888M , RU6888S .

History: RU60E5H

Keywords - RU60P60R MOSFET datasheet

 RU60P60R cross reference
 RU60P60R equivalent finder
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