RU60P60R Datasheet and Replacement
Type Designator: RU60P60R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
RU60P60R substitution
RU60P60R Datasheet (PDF)
ru60p60r.pdf
RU60P60RP-Channel Advanced Power MOSFETFeatures Pin Description -60V/-60A, RDS (ON) =22m(Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplicationsInvertersGSP-
Datasheet: RU60E16L , RU60E16R , RU60E25L , RU60E25R , RU60E5D , RU60E5H , RU60E6D , RU60E6H , IRFB4110 , RU6199Q , RU6199R , RU65120R , RU6581L , RU6581R , RU6881R , RU6888M , RU6888S .
History: WMO10N70EM | RU65120R | LSC60R290HF | SM2A04NSU | FDPF20N50T | 2SK2714 | RU6888M
Keywords - RU60P60R MOSFET datasheet
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RU60P60R replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: WMO10N70EM | RU65120R | LSC60R290HF | SM2A04NSU | FDPF20N50T | 2SK2714 | RU6888M
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