RU60P60R Specs and Replacement
Type Designator: RU60P60R
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 94 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-220
RU60P60R substitution
- MOSFET ⓘ Cross-Reference Search
RU60P60R datasheet
ru60p60r.pdf
RU60P60R P-Channel Advanced Power MOSFET Features Pin Description -60V/-60A, RDS (ON) =22m (Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications Inverters G S P-... See More ⇒
Detailed specifications: RU60E16L, RU60E16R, RU60E25L, RU60E25R, RU60E5D, RU60E5H, RU60E6D, RU60E6H, IRFB4110, RU6199Q, RU6199R, RU65120R, RU6581L, RU6581R, RU6881R, RU6888M, RU6888S
Keywords - RU60P60R MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
