RU65120R Specs and Replacement
Type Designator: RU65120R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
RU65120R substitution
- MOSFET ⓘ Cross-Reference Search
RU65120R datasheet
ru65120r.pdf
RU65120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 65V/120A, RDS (ON) =4.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter... See More ⇒
ru65110r.pdf
RU65110R N-Channel Advanced Power MOSFET Features Pin Description 65V/110A, RDS (ON) =4.5m (Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated F t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G ... See More ⇒
Detailed specifications: RU60E25R, RU60E5D, RU60E5H, RU60E6D, RU60E6H, RU60P60R, RU6199Q, RU6199R, AO3400, RU6581L, RU6581R, RU6881R, RU6888M, RU6888S, RU6H1L, RU6H2K, RU6H2L
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
