All MOSFET. RU65120R Datasheet

 

RU65120R Datasheet and Replacement


   Type Designator: RU65120R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

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RU65120R Datasheet (PDF)

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RU65120R

RU65120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/120A,RDS (ON) =4.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter

 9.1. Size:367K  ruichips
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RU65120R

RU65110RN-Channel Advanced Power MOSFETFeatures Pin Description 65V/110A, RDS (ON) =4.5m(Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)G

Datasheet: RU60E25R , RU60E5D , RU60E5H , RU60E6D , RU60E6H , RU60P60R , RU6199Q , RU6199R , IRF3710 , RU6581L , RU6581R , RU6881R , RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L .

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