RU6581R Specs and Replacement

Type Designator: RU6581R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 111 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 81 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220

RU6581R substitution

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RU6581R datasheet

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 ru6581r.pdf pdf_icon

RU6581R

RU6581R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 65V/81A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete... See More ⇒

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 ru6581l.pdf pdf_icon

RU6581R

RU6581L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 65V/81A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete... See More ⇒

Detailed specifications: RU60E5H, RU60E6D, RU60E6H, RU60P60R, RU6199Q, RU6199R, RU65120R, RU6581L, IRF3710, RU6881R, RU6888M, RU6888S, RU6H1L, RU6H2K, RU6H2L, RU6H2R, RU6H4R

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