All MOSFET. RU6H1L Datasheet

 

RU6H1L Datasheet and Replacement


   Type Designator: RU6H1L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.5 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO-252
 

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RU6H1L Datasheet (PDF)

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RU6H1L

RU6H1L N-Channel Advanced Power MOSFET Features Pin Description 600V/1.2A, RDS (ON) =10 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 4pF) Extremely high dv/dt capability TO-252 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute M

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History: FDME1034CZT

Keywords - RU6H1L MOSFET datasheet

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