RU6H1L Specs and Replacement

Type Designator: RU6H1L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: TO-252

RU6H1L substitution

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RU6H1L datasheet

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RU6H1L

RU6H1L N-Channel Advanced Power MOSFET Features Pin Description 600V/1.2A, RDS (ON) =10 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 4pF) Extremely high dv/dt capability TO-252 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute M... See More ⇒

Detailed specifications: RU6199Q, RU6199R, RU65120R, RU6581L, RU6581R, RU6881R, RU6888M, RU6888S, 2N7000, RU6H2K, RU6H2L, RU6H2R, RU6H4R, RU6H5L, RU6H7R, RU6H9P, RU6H9R

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