RU6H1L MOSFET. Datasheet pdf. Equivalent
Type Designator: RU6H1L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.5 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
Package: TO-252
RU6H1L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU6H1L Datasheet (PDF)
..1. Size:326K ruichips
ru6h1l.pdf
ru6h1l.pdf
RU6H1L N-Channel Advanced Power MOSFET Features Pin Description 600V/1.2A, RDS (ON) =10 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 4pF) Extremely high dv/dt capability TO-252 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute M
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