All MOSFET. RU6H4R Datasheet

 

RU6H4R Datasheet and Replacement


   Type Designator: RU6H4R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220
 

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RU6H4R Datasheet (PDF)

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RU6H4R

RU6H4RN-Channel Advanced Power MOSFETFeatures Pin Description 600V/4A, RDS (ON) =1800m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High efficiency switch mode power supplies LightingGSN-Channel MOSFETAbsolute Maximum Ratin

Datasheet: RU6581R , RU6881R , RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L , RU6H2R , IRFP250N , RU6H5L , RU6H7R , RU6H9P , RU6H9R , RU6Z5R , RU6Z8R , RU70100R , RU70190R .

History: LSC65R180GF | VS6614DS | WMM36N60F2 | WMN05N70MM | WMM53N65F2 | VSD003N04MS-G | WMM10N105C2

Keywords - RU6H4R MOSFET datasheet

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