RU6H4R Specs and Replacement

Type Designator: RU6H4R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220

RU6H4R substitution

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RU6H4R datasheet

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RU6H4R

RU6H4R N-Channel Advanced Power MOSFET Features Pin Description 600V/4A, RDS (ON) =1800m (Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High efficiency switch mode power supplies Lighting G S N-Channel MOSFET Absolute Maximum Ratin... See More ⇒

Detailed specifications: RU6581R, RU6881R, RU6888M, RU6888S, RU6H1L, RU6H2K, RU6H2L, RU6H2R, IRFP250N, RU6H5L, RU6H7R, RU6H9P, RU6H9R, RU6Z5R, RU6Z8R, RU70100R, RU70190R

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