RU6H7R Specs and Replacement

Type Designator: RU6H7R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

RU6H7R substitution

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RU6H7R datasheet

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RU6H7R

RU6H7R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 600V/7A, RDS (ON) =1 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 16pF) Extremely high dv/dt capability TO-220 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximum Rati... See More ⇒

Detailed specifications: RU6888M, RU6888S, RU6H1L, RU6H2K, RU6H2L, RU6H2R, RU6H4R, RU6H5L, IRF9540, RU6H9P, RU6H9R, RU6Z5R, RU6Z8R, RU70100R, RU70190R, RU70200R, RU7080L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.