All MOSFET. RU6H7R Datasheet

 

RU6H7R Datasheet and Replacement


   Type Designator: RU6H7R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

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RU6H7R Datasheet (PDF)

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RU6H7R

RU6H7RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/7A,RDS (ON) =1 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 16pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Rati

Datasheet: RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L , K3569 , RU6H9P , RU6H9R , RU6Z5R , RU6Z8R , RU70100R , RU70190R , RU70200R , RU7080L .

History: SSW1N50A | APT6015JN | PHP6N60E | STS2309A | PHP4N60E

Keywords - RU6H7R MOSFET datasheet

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