RU6H7R Datasheet and Replacement
Type Designator: RU6H7R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220
RU6H7R substitution
RU6H7R Datasheet (PDF)
ru6h7r.pdf

RU6H7RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/7A,RDS (ON) =1 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 16pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Rati
Datasheet: RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L , AO3400 , RU6H9P , RU6H9R , RU6Z5R , RU6Z8R , RU70100R , RU70190R , RU70200R , RU7080L .
History: RZL035P01TR | SDF240 | WMJ53N60C4 | SM2312NSA | WMO15N65C2 | 3SK162 | HM1P15MR
Keywords - RU6H7R MOSFET datasheet
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History: RZL035P01TR | SDF240 | WMJ53N60C4 | SM2312NSA | WMO15N65C2 | 3SK162 | HM1P15MR



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