All MOSFET. RU6H9R Datasheet

 

RU6H9R Datasheet and Replacement


   Type Designator: RU6H9R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

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RU6H9R Datasheet (PDF)

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RU6H9R

RU6H9RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersupplies LightingN-Channel MOSFETAbsolute Maximum

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RU6H9R

RU6H9PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WSR80N10 | SPP80N08S2L | FDMS7602S | WST02N10 | AP10N70R-A | IXTH31N20MB | WST2004

Keywords - RU6H9R MOSFET datasheet

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