RU6H9R Specs and Replacement
Type Designator: RU6H9R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220
RU6H9R substitution
- MOSFET ⓘ Cross-Reference Search
RU6H9R datasheet
ru6h9r.pdf
RU6H9R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 600V/9.5A, RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability TO-220 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum... See More ⇒
ru6h9p.pdf
RU6H9P N-Channel Advanced Power MOSFET MOSFET Features Pin Description 600V/9.5A, RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability 100% avalanche tested TO-220F Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximum... See More ⇒
Detailed specifications: RU6H1L, RU6H2K, RU6H2L, RU6H2R, RU6H4R, RU6H5L, RU6H7R, RU6H9P, 2SK3878, RU6Z5R, RU6Z8R, RU70100R, RU70190R, RU70200R, RU7080L, RU7085R, RU7088A
Keywords - RU6H9R MOSFET specs
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