RU6H9R Datasheet and Replacement
Type Designator: RU6H9R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220
RU6H9R substitution
RU6H9R Datasheet (PDF)
ru6h9r.pdf

RU6H9RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersupplies LightingN-Channel MOSFETAbsolute Maximum
ru6h9p.pdf

RU6H9PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum
Datasheet: RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P , IRFP260 , RU6Z5R , RU6Z8R , RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A .
Keywords - RU6H9R MOSFET datasheet
RU6H9R cross reference
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History: SVF2N60M | RU6H1L



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