All MOSFET. RU6H9R Datasheet

 

RU6H9R Datasheet and Replacement


   Type Designator: RU6H9R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

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RU6H9R Datasheet (PDF)

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RU6H9R

RU6H9RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersupplies LightingN-Channel MOSFETAbsolute Maximum

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RU6H9R

RU6H9PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum

Datasheet: RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P , 8205A , RU6Z5R , RU6Z8R , RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A .

History: SUP40N10-30 | WMK030N06HG4 | BSC0805LS | PMV185XN | SUM90N10-8M2P | STD2NK90Z | SI2343CDS

Keywords - RU6H9R MOSFET datasheet

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