RU70190R Datasheet and Replacement
Type Designator: RU70190R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 96 nS
Cossⓘ - Output Capacitance: 700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
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RU70190R Datasheet (PDF)
ru70190r.pdf

RU70190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/190A,RDS (ON) =4.2m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Battery Inverter/UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating
ru70100r.pdf

RU70100R N-Channel Advanced Power MOSFET Features Pin Description 70V/100A, RDS (ON) =4.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HUFA76419P3 | IXFC16N50P | GSM4936S | 2SK1967 | SIHFI9630G | ATM2N65TE | STL7NM60N
Keywords - RU70190R MOSFET datasheet
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History: HUFA76419P3 | IXFC16N50P | GSM4936S | 2SK1967 | SIHFI9630G | ATM2N65TE | STL7NM60N



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