RU70190R Specs and Replacement
Type Designator: RU70190R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 96 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-220
RU70190R substitution
- MOSFET ⓘ Cross-Reference Search
RU70190R datasheet
ru70190r.pdf
RU70190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 70V/190A, RDS (ON) =4.2m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Battery Inverter/UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating ... See More ⇒
ru70100r.pdf
RU70100R N-Channel Advanced Power MOSFET Features Pin Description 70V/100A, RDS (ON) =4.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems ... See More ⇒
Detailed specifications: RU6H4R, RU6H5L, RU6H7R, RU6H9P, RU6H9R, RU6Z5R, RU6Z8R, RU70100R, IRF4905, RU70200R, RU7080L, RU7085R, RU7088A, RU70E15L, RU70E4D, RU70E4H, RU75110R
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