All MOSFET. RU70190R Datasheet

 

RU70190R Datasheet and Replacement


   Type Designator: RU70190R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 96 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220
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RU70190R Datasheet (PDF)

 ..1. Size:303K  ruichips
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RU70190R

RU70190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/190A,RDS (ON) =4.2m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Battery Inverter/UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating

 9.1. Size:335K  ruichips
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RU70190R

RU70100R N-Channel Advanced Power MOSFET Features Pin Description 70V/100A, RDS (ON) =4.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems

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History: HUFA76419P3 | IXFC16N50P | GSM4936S | 2SK1967 | SIHFI9630G | ATM2N65TE | STL7NM60N

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