RU75400Q Datasheet and Replacement
Type Designator: RU75400Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 400 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 410 nC
tr ⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 1440 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-247
RU75400Q substitution
RU75400Q Datasheet (PDF)
ru75400q.pdf

RU75400QN-Channel Advanced Power MOSFETFeatures Pin Description 75V/400A, RDS (ON) =1.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)G D S TO247DApplications High Effic
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 3SK134B | KF4N60F | CED2303 | RU75210R | APT50M50JVFR | IXTM5N100A
Keywords - RU75400Q MOSFET datasheet
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History: 3SK134B | KF4N60F | CED2303 | RU75210R | APT50M50JVFR | IXTM5N100A



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