RU7570L MOSFET. Datasheet pdf. Equivalent
Type Designator: RU7570L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 68 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-252
RU7570L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU7570L Datasheet (PDF)
..1. Size:290K ruichips
ru7570l.pdf
ru7570l.pdf
RU7570LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/70A,RDS (ON) =9m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching and Fully Avalanche Rated Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications High Speed Power SwitchingN-Channel MOSFETAbsolute Maxi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
