RU7590R MOSFET. Datasheet pdf. Equivalent
Type Designator: RU7590R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: TO-220
RU7590R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU7590R Datasheet (PDF)
ru7590r.pdf
RU7590RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/90A,RDS (ON) =10m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications The device is suitable for use inPWM ,load switching and generalpurpose applications.N-Channe
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P117AATX
History: P117AATX
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