RU7H2K Datasheet. Specs and Replacement

Type Designator: RU7H2K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO-251

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RU7H2K datasheet

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RU7H2K

RU7H2K N-Channel Advanced Power MOSFET Features Pin Description 700V/2A, RDS (ON) =5000m (Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO251 Applications High efficiency switch mode power supplies N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit... See More ⇒

Detailed specifications: RU75260Q, RU75400Q, RU7550R, RU7550S, RU7570L, RU7580R, RU7582S, RU7590R, TK10A60D, RU80100R, RU80100S, RU80190R, RU8080R, RU8080S, RU8099R, RU80N15Q, RU80N15R

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.