All MOSFET. RU7H2K Datasheet

 

RU7H2K Datasheet and Replacement


   Type Designator: RU7H2K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-251
 

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RU7H2K Datasheet (PDF)

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RU7H2K

RU7H2KN-Channel Advanced Power MOSFETFeatures Pin Description 700V/2A, RDS (ON) =5000m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO251Applications High efficiency switch mode power suppliesN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Unit

Datasheet: RU75260Q , RU75400Q , RU7550R , RU7550S , RU7570L , RU7580R , RU7582S , RU7590R , TK10A60D , RU80100R , RU80100S , RU80190R , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R .

History: DMN3018SSS

Keywords - RU7H2K MOSFET datasheet

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