RU7H2K Datasheet and Replacement
Type Designator: RU7H2K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO-251
RU7H2K substitution
RU7H2K Datasheet (PDF)
ru7h2k.pdf

RU7H2KN-Channel Advanced Power MOSFETFeatures Pin Description 700V/2A, RDS (ON) =5000m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO251Applications High efficiency switch mode power suppliesN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Unit
Datasheet: RU75260Q , RU75400Q , RU7550R , RU7550S , RU7570L , RU7580R , RU7582S , RU7590R , 13N50 , RU80100R , RU80100S , RU80190R , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R .
History: TMAN11N90Z | SED14N65G
Keywords - RU7H2K MOSFET datasheet
RU7H2K cross reference
RU7H2K equivalent finder
RU7H2K lookup
RU7H2K substitution
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History: TMAN11N90Z | SED14N65G



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