All MOSFET. RU7H2K Datasheet

 

RU7H2K MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU7H2K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-251

 RU7H2K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU7H2K Datasheet (PDF)

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 ru7h2k.pdf

RU7H2K RU7H2K

RU7H2KN-Channel Advanced Power MOSFETFeatures Pin Description 700V/2A, RDS (ON) =5000m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO251Applications High efficiency switch mode power suppliesN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Unit

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SIS334DN

 

 
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