RU8080S Datasheet. Specs and Replacement

Type Designator: RU8080S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-263

RU8080S substitution

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RU8080S datasheet

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 ru8080s.pdf pdf_icon

RU8080S

RU8080S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 80V/80A, RDS (ON) =9m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available TO-263 (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common ... See More ⇒

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 ru8080r.pdf pdf_icon

RU8080S

RU8080R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 80V/80A, RDS (ON) =9m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common ... See More ⇒

Detailed specifications: RU7580R, RU7582S, RU7590R, RU7H2K, RU80100R, RU80100S, RU80190R, RU8080R, IRF1407, RU8099R, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6, RU8205G, RU8590R

Keywords - RU8080S MOSFET specs

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