All MOSFET. RU8080S Datasheet

 

RU8080S Datasheet and Replacement


   Type Designator: RU8080S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-263
 

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RU8080S Datasheet (PDF)

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RU8080S

RU8080SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/80A,RDS (ON) =9m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon

 8.1. Size:303K  ruichips
 ru8080r.pdf pdf_icon

RU8080S

RU8080RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/80A,RDS (ON) =9m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon

Datasheet: RU7580R , RU7582S , RU7590R , RU7H2K , RU80100R , RU80100S , RU80190R , RU8080R , P0903BDG , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R .

History: FQD1N60CTM | AP3P7R0EJB

Keywords - RU8080S MOSFET datasheet

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