RU8080S Datasheet and Replacement
Type Designator: RU8080S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO-263
RU8080S substitution
RU8080S Datasheet (PDF)
ru8080s.pdf

RU8080SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/80A,RDS (ON) =9m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon
ru8080r.pdf

RU8080RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/80A,RDS (ON) =9m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon
Datasheet: RU7580R , RU7582S , RU7590R , RU7H2K , RU80100R , RU80100S , RU80190R , RU8080R , RFP50N06 , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R .
History: SED14N65G | TMAN11N90Z
Keywords - RU8080S MOSFET datasheet
RU8080S cross reference
RU8080S equivalent finder
RU8080S lookup
RU8080S substitution
RU8080S replacement
History: SED14N65G | TMAN11N90Z



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