RU8099R Datasheet. Specs and Replacement
Type Designator: RU8099R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 205 nS
Cossⓘ - Output Capacitance: 810 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-220
RU8099R substitution
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RU8099R datasheet
ru8099r.pdf
RU8099R N-Channel Advanced Power MOSFET Features Pin Description 90V/90A RDS (ON)=8m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications High efficiency switching mode power supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit ... See More ⇒
Detailed specifications: RU7582S, RU7590R, RU7H2K, RU80100R, RU80100S, RU80190R, RU8080R, RU8080S, 2SK3568, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6, RU8205G, RU8590R, RUE002N02TL
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