All MOSFET. RU8099R Datasheet

 

RU8099R Datasheet and Replacement


   Type Designator: RU8099R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 205 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
 

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RU8099R Datasheet (PDF)

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RU8099R

RU8099RN-Channel Advanced Power MOSFETFeatures Pin Description 90V/90ARDS (ON)=8m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh efficiency switching modepower supplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Unit

Datasheet: RU7582S , RU7590R , RU7H2K , RU80100R , RU80100S , RU80190R , RU8080R , RU8080S , 2SK3568 , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R , RUE002N02TL .

History: CS4N80A4HD-G | RU80N15R | NTMD5838NL

Keywords - RU8099R MOSFET datasheet

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