RU80T4H Datasheet. Specs and Replacement
Type Designator: RU80T4H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOP-8
RU80T4H substitution
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RU80T4H datasheet
ru80t4h.pdf
RU80T4H N-Channel Advanced Power MOSFET Features Pin Description 80V/4A, D2 RDS (ON) =70m (Typ.)@VGS=10V D2 RDS (ON) =80m (Typ.)@VGS=4.5V D1 RDS (ON) =90m (Typ.)@VGS=2.5V D1 Low On-Resistance Super High Dense Cell Design G2 Reliable and Rugged S2 Lead Free and Green Devices Available (RoHS Compliant) G1 pin1 S1 SOP-8 Applications D1 D2 DC/DC C... See More ⇒
Detailed specifications: RU80100S, RU80190R, RU8080R, RU8080S, RU8099R, RU80N15Q, RU80N15R, RU80N15S, SI2302, RU8205C6, RU8205G, RU8590R, RUE002N02TL, RUE003N02TL, RUF015N02TL, RUF025N02TL, RUL035N02TR
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