All MOSFET. RU80T4H Datasheet

 

RU80T4H Datasheet and Replacement


   Type Designator: RU80T4H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOP-8
 

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RU80T4H Datasheet (PDF)

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RU80T4H

RU80T4HN-Channel Advanced Power MOSFETFeatures Pin Description 80V/4A,D2 RDS (ON) =70m(Typ.)@VGS=10VD2 RDS (ON) =80m(Typ.)@VGS=4.5VD1 RDS (ON) =90m(Typ.)@VGS=2.5VD1 Low On-Resistance Super High Dense Cell DesignG2 Reliable and RuggedS2 Lead Free and Green Devices Available (RoHS Compliant)G1pin1S1SOP-8Applications D1 D2 DC/DC C

Datasheet: RU80100S , RU80190R , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R , RU80N15S , SI2302 , RU8205C6 , RU8205G , RU8590R , RUE002N02TL , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR .

History: 1N60G | WNMD6003

Keywords - RU80T4H MOSFET datasheet

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