All MOSFET. RU80T4H Datasheet

 

RU80T4H MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU80T4H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOP-8

 RU80T4H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU80T4H Datasheet (PDF)

 ..1. Size:317K  ruichips
 ru80t4h.pdf

RU80T4H RU80T4H

RU80T4HN-Channel Advanced Power MOSFETFeatures Pin Description 80V/4A,D2 RDS (ON) =70m(Typ.)@VGS=10VD2 RDS (ON) =80m(Typ.)@VGS=4.5VD1 RDS (ON) =90m(Typ.)@VGS=2.5VD1 Low On-Resistance Super High Dense Cell DesignG2 Reliable and RuggedS2 Lead Free and Green Devices Available (RoHS Compliant)G1pin1S1SOP-8Applications D1 D2 DC/DC C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top