RU8205C6 Datasheet and Replacement
Type Designator: RU8205C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-23
RU8205C6 substitution
RU8205C6 Datasheet (PDF)
ru8205c6.pdf

RU8205C6N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =22m (Typ.) @ VGS=4.5VRDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOT-23-6Applications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
ru8205bc6.pdf

RU8205BC6N-Channel Advanced Power MOSFETFeatures Pin Description 20V/6A,G2 RDS (ON) =11m(Typ.)@VGS=4.5V RDS (ON) =16m(Typ.)@VGS=2.5V D1/D2 Low RDS (ON)G1 Super High Dense Cell DesignS2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2Dual N-Channel MOSFET S1SOT23-6D1 D2Applications Power ManagementG1 G2
ru8205g.pdf

RU8205GN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =21m (Typ.) @ VGS=4.5VRDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and RuggedTSSOP-8 Lead Free and Green AvailableApplications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (T
Datasheet: RU80190R , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , 7N60 , RU8205G , RU8590R , RUE002N02TL , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 .
History: SSFN2269 | OSG50R1K5FF | NTMFS6B05NT3G | FDPF44N25TRDTU | IPP80N06S4L-07 | WMK05N80M3 | FQB60N03L
Keywords - RU8205C6 MOSFET datasheet
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History: SSFN2269 | OSG50R1K5FF | NTMFS6B05NT3G | FDPF44N25TRDTU | IPP80N06S4L-07 | WMK05N80M3 | FQB60N03L



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