All MOSFET. RU8205C6 Datasheet

 

RU8205C6 Datasheet and Replacement


   Type Designator: RU8205C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT-23
 

 RU8205C6 substitution

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RU8205C6 Datasheet (PDF)

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RU8205C6

RU8205C6N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =22m (Typ.) @ VGS=4.5VRDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOT-23-6Applications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

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RU8205C6

RU8205BC6N-Channel Advanced Power MOSFETFeatures Pin Description 20V/6A,G2 RDS (ON) =11m(Typ.)@VGS=4.5V RDS (ON) =16m(Typ.)@VGS=2.5V D1/D2 Low RDS (ON)G1 Super High Dense Cell DesignS2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2Dual N-Channel MOSFET S1SOT23-6D1 D2Applications Power ManagementG1 G2

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RU8205C6

RU8205GN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =21m (Typ.) @ VGS=4.5VRDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and RuggedTSSOP-8 Lead Free and Green AvailableApplications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (T

Datasheet: RU80190R , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , AO3407 , RU8205G , RU8590R , RUE002N02TL , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 .

History: IRFB4212PBF

Keywords - RU8205C6 MOSFET datasheet

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