RUL035N02TR Datasheet. Specs and Replacement

Type Designator: RUL035N02TR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: TUMT6

RUL035N02TR substitution

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RUL035N02TR datasheet

 ..1. Size:100K  ruichips
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RUL035N02TR

RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol XD Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code ... See More ⇒

 5.1. Size:102K  rohm
 rul035n02.pdf pdf_icon

RUL035N02TR

RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol XD Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code ... See More ⇒

Detailed specifications: RU80T4H, RU8205C6, RU8205G, RU8590R, RUE002N02TL, RUE003N02TL, RUF015N02TL, RUF025N02TL, 2N60, RUM001L02, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, RUR040N02FRA

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