All MOSFET. RUR020N02TL Datasheet

 

RUR020N02TL MOSFET. Datasheet pdf. Equivalent

Type Designator: RUR020N02TL

SMD Transistor Code: XK

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.54 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: TSMT3

RUR020N02TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUR020N02TL Datasheet (PDF)

1.1. rur020n02.pdf Size:229K _rohm

RUR020N02TL
RUR020N02TL

1.5V Drive Nch MOSFET RUR020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : XK (3) Drain Applications Switching Packaging specifications Inner circuit Packag

1.2. rur020n02tl.pdf Size:598K _ruichips

RUR020N02TL
RUR020N02TL

RUR020N02 Nch 20V 2A Power MOSFET Datasheet lOutline VDSS TSMT3 20V (3) RDS(on) (Max.) 105mW ID 2A (1) PD 1W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE lPackaging spe

 

Datasheet: RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , IRF9540N , RUR040N02FRA , RUR040N02TL , RUS100N02 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T .

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