RUR020N02TL Datasheet. Specs and Replacement

Type Designator: RUR020N02TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TSMT3

RUR020N02TL substitution

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RUR020N02TL datasheet

 ..1. Size:598K  ruichips
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RUR020N02TL

RUR020N02 Nch 20V 2A Power MOSFET Datasheet lOutline VDSS TSMT3 20V (3) RDS(on) (Max.) 105mW ID 2A (1) PD 1W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE lPackaging spe... See More ⇒

 5.1. Size:229K  rohm
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RUR020N02TL

1.5V Drive Nch MOSFET RUR020N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XK (3) Drain Applications Switching Packaging specifications Inner circuit Pac... See More ⇒

Detailed specifications: RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, IRF1405, RUR040N02FRA, RUR040N02TL, RUS100N02, PHB101NQ04T, PHB108NQ03LT, PHB110NQ06LT, PHB110NQ08LT, PHB112N06T

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