All MOSFET. RUR020N02TL Datasheet

 

RUR020N02TL Datasheet and Replacement


   Type Designator: RUR020N02TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TSMT3
 

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RUR020N02TL Datasheet (PDF)

 ..1. Size:598K  ruichips
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RUR020N02TL

RUR020N02 Nch 20V 2A Power MOSFET DatasheetlOutlineVDSS TSMT3 20V(3) RDS(on) (Max.)105mWID2A(1) PD1W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant1 ESD PROTECTION DIODE 2 BODY DIODE lPackaging spe

 5.1. Size:229K  rohm
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RUR020N02TL

1.5V Drive Nch MOSFET RUR020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XK (3) Drain Applications Switching Packaging specifications Inner circuit Pac

Datasheet: RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , NCEP15T14 , RUR040N02FRA , RUR040N02TL , RUS100N02 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T .

History: PFP12N65 | SFB096N200C3 | RJK0223DNS | AM110N06-08P | 2SJ485 | NP90N04VLG | PW5D8EA

Keywords - RUR020N02TL MOSFET datasheet

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