PHB108NQ03LT Datasheet. Specs and Replacement

Type Designator: PHB108NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 102 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: D2PAK

PHB108NQ03LT substitution

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PHB108NQ03LT datasheet

 ..1. Size:94K  philips
 phb108nq03lt phd108nq03lt phu108nq03lt.pdf pdf_icon

PHB108NQ03LT

PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati... See More ⇒

 ..2. Size:253K  philips
 phb108nq03lt phd108nq03lt php108nq03lt.pdf pdf_icon

PHB108NQ03LT

PHP/PHB/PHD108NQ03LT TrenchMOS logic level FET Rev. 02 11 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatibl... See More ⇒

 9.1. Size:331K  philips
 phb100n03lt-01.pdf pdf_icon

PHB108NQ03LT

PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHB100N03LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated ... See More ⇒

 9.2. Size:178K  philips
 phb101nq04t.pdf pdf_icon

PHB108NQ03LT

PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea... See More ⇒

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Detailed specifications: RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, RUR040N02FRA, RUR040N02TL, RUS100N02, PHB101NQ04T, IRLB3034, PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T, PHB11N06LT, PHB129NQ04LT, PHB143NQ04T, PHB145NQ06T

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