PHB129NQ04LT Datasheet. Specs and Replacement

Type Designator: PHB129NQ04LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 145 nS

Cossⓘ - Output Capacitance: 635 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: D2PAK

PHB129NQ04LT substitution

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PHB129NQ04LT datasheet

 ..1. Size:96K  philips
 php129nq04lt phb129nq04lt.pdf pdf_icon

PHB129NQ04LT

PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC... See More ⇒

 ..2. Size:94K  philips
 phb129nq04lt php129nq04lt.pdf pdf_icon

PHB129NQ04LT

PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC... See More ⇒

 9.1. Size:114K  philips
 phb12nq15t phd12nq15t php12nq15t 1.pdf pdf_icon

PHB129NQ04LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 A g RDS(ON) 200 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in... See More ⇒

 9.2. Size:56K  philips
 phb125n06l.pdf pdf_icon

PHB129NQ04LT

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC)1 75 A the device fe... See More ⇒

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Detailed specifications: RUS100N02, PHB101NQ04T, PHB108NQ03LT, PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T, PHB11N06LT, RU7088R, PHB143NQ04T, PHB145NQ06T, PHB146NQ06LT, PHB152NQ03LTA, PHB153NQ08LT, PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T

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