PHB225NQ04T Datasheet. Specs and Replacement
Type Designator: PHB225NQ04T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 1390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: D2PAK
PHB225NQ04T substitution
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PHB225NQ04T datasheet
phb225nq04t php225nq04t.pdf
PHP/PHB225NQ04T N-channel TrenchMOS standard level FET Rev. 01 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC ... See More ⇒
phb222nq04lt php222nq04lt.pdf
PHP/PHB222NQ04LT N-channel TrenchMOS logic level FET Rev. 01 13 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC... See More ⇒
Detailed specifications: PHB146NQ06LT, PHB152NQ03LTA, PHB153NQ08LT, PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, IRF840, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT
Keywords - PHB225NQ04T MOSFET specs
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