PHB225NQ04T Datasheet and Replacement
Type Designator: PHB225NQ04T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 1390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: D2PAK
PHB225NQ04T substitution
PHB225NQ04T Datasheet (PDF)
phb225nq04t php225nq04t.pdf

PHP/PHB225NQ04TN-channel TrenchMOS standard level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
phb222nq04lt php222nq04lt.pdf

PHP/PHB222NQ04LTN-channel TrenchMOS logic level FETRev. 01 13 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
Datasheet: PHB146NQ06LT , PHB152NQ03LTA , PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , IRF840 , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT .
History: MS60P02NE | STL65DN3LLH5
Keywords - PHB225NQ04T MOSFET datasheet
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History: MS60P02NE | STL65DN3LLH5



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