All MOSFET. PHB38N02LT Datasheet

 

PHB38N02LT Datasheet and Replacement


   Type Designator: PHB38N02LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 44.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: D2PAK
 

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PHB38N02LT Datasheet (PDF)

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PHB38N02LT

PHB/PHD38N02LTTrenchMOS logic level FETRev. 01 30 June 2003 Product data1. Product profile1.1 DescriptionN-channel logic level field-effect transistor in a plastic package using TrenchMOStechnology.Product availability:PHB38N02LT in SOT404 (D2-PAK)PHD38N02LT in SOT428 (D-PAK).1.2 Features Low on-state resistance 2.5 V gate drive.1.3 Applications Linear regula

Datasheet: PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , IRF540 , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT .

History: STD3LN62K3 | CPH5852

Keywords - PHB38N02LT MOSFET datasheet

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