PHB38N02LT Datasheet. Specs and Replacement

Type Designator: PHB38N02LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 44.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: D2PAK

PHB38N02LT substitution

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PHB38N02LT datasheet

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PHB38N02LT

PHB/PHD38N02LT TrenchMOS logic level FET Rev. 01 30 June 2003 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). 1.2 Features Low on-state resistance 2.5 V gate drive. 1.3 Applications Linear regula... See More ⇒

Detailed specifications: PHB153NQ08LT, PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, IRF540N, PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT

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