All MOSFET. PHB73N06T Datasheet

 

PHB73N06T Datasheet and Replacement


   Type Designator: PHB73N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 421 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK
 

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PHB73N06T Datasheet (PDF)

 ..1. Size:260K  philips
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PHB73N06T

PHP73N06T; PHB73N06TTrenchMOS standard level FETRev. 02 5 July 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP73N06T in SOT78 (TO-220AB)PHB73N06T in SOT404 (D2-PAK).2. Features Fast switching Very low on-state resistance.3. Applications General purp

Datasheet: PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , 50N06 , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T .

History: APT10M19BVFRG | IRFU3504Z

Keywords - PHB73N06T MOSFET datasheet

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