PHB73N06T Datasheet. Specs and Replacement

Type Designator: PHB73N06T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 79 nS

Cossⓘ - Output Capacitance: 421 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: D2PAK

PHB73N06T substitution

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PHB73N06T datasheet

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PHB73N06T

PHP73N06T; PHB73N06T TrenchMOS standard level FET Rev. 02 5 July 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP73N06T in SOT78 (TO-220AB) PHB73N06T in SOT404 (D2-PAK). 2. Features Fast switching Very low on-state resistance. 3. Applications General purp... See More ⇒

Detailed specifications: PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, 50N06, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T

Keywords - PHB73N06T MOSFET specs

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