PHB78NQ03LT Datasheet. Specs and Replacement

Type Designator: PHB78NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: D2PAK

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PHB78NQ03LT datasheet

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PHB78NQ03LT

PHB78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 13 June 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching 1.3 Applications Computer motherboards DC-to-DC converters 1.4 Quick reference da... See More ⇒

Detailed specifications: PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, IRFP460, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.