All MOSFET. PHB78NQ03LT Datasheet

 

PHB78NQ03LT Datasheet and Replacement


   Type Designator: PHB78NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: D2PAK
 

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PHB78NQ03LT Datasheet (PDF)

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PHB78NQ03LT

PHB78NQ03LTN-channel TrenchMOS logic level FETRev. 05 13 June 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Fast switching1.3 Applications Computer motherboards DC-to-DC converters1.4 Quick reference da

Datasheet: PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , IRF640 , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT .

History: AOH3106 | TPCS8303 | AOLF66610 | HFD5N60S | IRFS9243 | P0903BT | VSE044C03MD

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