All MOSFET. PHB96NQ03LT Datasheet

 

PHB96NQ03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHB96NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm
   Package: D2PAK

 PHB96NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB96NQ03LT Datasheet (PDF)

 ..1. Size:296K  philips
phb96nq03lt php96nq03lt.pdf

PHB96NQ03LT
PHB96NQ03LT

PHP/PHB/PHD96NQ03LTTrenchMOS logic level FETRev. 05 5 June 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP96NQ03LT in SOT78 (TO-220AB)PHB96NQ03LT in SOT404 (D2-PAK)PHD96NQ03LT in SOT428 (D-PAK).2. Features Low gate charge Low on-state resistance.3. Appli

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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