PHB96NQ03LT Datasheet. Specs and Replacement

Type Designator: PHB96NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm

Package: D2PAK

PHB96NQ03LT substitution

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PHB96NQ03LT datasheet

 ..1. Size:296K  philips
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PHB96NQ03LT

PHP/PHB/PHD96NQ03LT TrenchMOS logic level FET Rev. 05 5 June 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP96NQ03LT in SOT78 (TO-220AB) PHB96NQ03LT in SOT404 (D2-PAK) PHD96NQ03LT in SOT428 (D-PAK). 2. Features Low gate charge Low on-state resistance. 3. Appli... See More ⇒

Detailed specifications: PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, IRF640, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T

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