PHB96NQ03LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB96NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 725 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm
Package: D2PAK
PHB96NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB96NQ03LT Datasheet (PDF)
phb96nq03lt php96nq03lt.pdf
PHP/PHB/PHD96NQ03LTTrenchMOS logic level FETRev. 05 5 June 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP96NQ03LT in SOT78 (TO-220AB)PHB96NQ03LT in SOT404 (D2-PAK)PHD96NQ03LT in SOT428 (D-PAK).2. Features Low gate charge Low on-state resistance.3. Appli
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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