All MOSFET. PHD16N03LT Datasheet

 

PHD16N03LT Datasheet and Replacement


   Type Designator: PHD16N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: DPAK
 

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PHD16N03LT Datasheet (PDF)

 ..1. Size:91K  philips
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PHD16N03LT

PHD16N03LTN-channel TrenchMOS logic level FETRev. 01 08 March 2004 Product dataM3D3001. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Fast switching.1.3 Applications DC-to-DC converters General purpose switching.1.4 Quick reference da

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PHD16N03LT

PHD16N03TTrenchMOS standard level FETRev. 01 18 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHD16N03T in SOT428 (D-PAK).1.2 Features Fast Switching TrenchMOSTM technology.1.3 Applications DC-to-DC converters General purpose switch.

Datasheet: PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , IRF640N , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT .

History: NCE82H140D | PHD18NQ10T | VBA5325 | SM6011NSF | IXFT30N40Q | H02N60SI | HM7N65I

Keywords - PHD16N03LT MOSFET datasheet

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