PHD16N03LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHD16N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: DPAK
PHD16N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHD16N03LT Datasheet (PDF)
phd16n03lt.pdf
PHD16N03LTN-channel TrenchMOS logic level FETRev. 01 08 March 2004 Product dataM3D3001. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Fast switching.1.3 Applications DC-to-DC converters General purpose switching.1.4 Quick reference da
phd16n03t.pdf
PHD16N03TTrenchMOS standard level FETRev. 01 18 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHD16N03T in SOT428 (D-PAK).1.2 Features Fast Switching TrenchMOSTM technology.1.3 Applications DC-to-DC converters General purpose switch.
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: PHB9N60E
History: PHB9N60E
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