All MOSFET. PHD18NQ10T Datasheet

 

PHD18NQ10T Datasheet and Replacement


   Type Designator: PHD18NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DPAK
 

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PHD18NQ10T Datasheet (PDF)

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PHD18NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

Datasheet: PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , 10N60 , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT .

History: AM3993P | LSB65R125HT | OSG90R250HF | RZQ045P01TR | CEB1195 | H02N60SI | RT3K11M

Keywords - PHD18NQ10T MOSFET datasheet

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