All MOSFET. PHD22NQ20T Datasheet

 

PHD22NQ20T MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHD22NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 21.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: DPAK

 PHD22NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD22NQ20T Datasheet (PDF)

 ..1. Size:89K  philips
 phd22nq20t.pdf

PHD22NQ20T PHD22NQ20T

PHD22NQ20TN-channel TrenchMOS standard level FETRev. 01 08 March 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Low on-state resistance Fast switching.1.3 Applications DC-to-DC converters General purpose switching.1.4 Quick reference dat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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