All MOSFET. PHD22NQ20T Datasheet

 

PHD22NQ20T MOSFET. Datasheet pdf. Equivalent

Type Designator: PHD22NQ20T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21.1 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 145 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: DPAK

PHD22NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD22NQ20T Datasheet (PDF)

1.1. phd22nq20t.pdf Size:89K _philips

PHD22NQ20T
PHD22NQ20T

PHD22NQ20T N-channel TrenchMOS™ standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Low on-state resistance Fast switching. 1.3 Applications DC-to-DC converters General purpose switching. 1.4 Quick reference dat

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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