All MOSFET. PHD22NQ20T Datasheet

 

PHD22NQ20T Datasheet and Replacement


   Type Designator: PHD22NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21.1 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: DPAK
 

 PHD22NQ20T substitution

   - MOSFET ⓘ Cross-Reference Search

 

PHD22NQ20T Datasheet (PDF)

 ..1. Size:89K  philips
 phd22nq20t.pdf pdf_icon

PHD22NQ20T

PHD22NQ20TN-channel TrenchMOS standard level FETRev. 01 08 March 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Low on-state resistance Fast switching.1.3 Applications DC-to-DC converters General purpose switching.1.4 Quick reference dat

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , AON6414A , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

History: NVMTS0D6N04C

Keywords - PHD22NQ20T MOSFET datasheet

 PHD22NQ20T cross reference
 PHD22NQ20T equivalent finder
 PHD22NQ20T lookup
 PHD22NQ20T substitution
 PHD22NQ20T replacement

 

 
Back to Top

 


 
.