PHD22NQ20T PDF and Equivalents Search

 

PHD22NQ20T Specs and Replacement

Type Designator: PHD22NQ20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 145 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: DPAK

PHD22NQ20T substitution

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PHD22NQ20T datasheet

 ..1. Size:89K  philips
 phd22nq20t.pdf pdf_icon

PHD22NQ20T

PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching. 1.3 Applications DC-to-DC converters General purpose switching. 1.4 Quick reference dat... See More ⇒

Detailed specifications: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFB4227 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

History: HUF76432S3S

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