PHD23NQ10T Datasheet. Specs and Replacement

Type Designator: PHD23NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 139 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: DPAK

PHD23NQ10T substitution

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PHD23NQ10T datasheet

 ..1. Size:101K  philips
 phd23nq10t.pdf pdf_icon

PHD23NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 70 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

 ..2. Size:102K  philips
 phb23nq10t phd23nq10t php23nq10t 1.pdf pdf_icon

PHD23NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 70 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

Detailed specifications: PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, IRF3710, PHD34NQ10T, PHD36N03LT, PHD37N06LT, PHD44N06LT, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT

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