PHD23NQ10T Datasheet and Replacement
Type Designator: PHD23NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 139 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: DPAK
PHD23NQ10T substitution
PHD23NQ10T Datasheet (PDF)
phd23nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
phb23nq10t phd23nq10t php23nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
Datasheet: PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , IRF3710 , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT .
History: IRHLUC7670Z4
Keywords - PHD23NQ10T MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRHLUC7670Z4
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