All MOSFET. PHD23NQ10T Datasheet

 

PHD23NQ10T Datasheet and Replacement


   Type Designator: PHD23NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DPAK
 

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PHD23NQ10T Datasheet (PDF)

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PHD23NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

 ..2. Size:102K  philips
 phb23nq10t phd23nq10t php23nq10t 1.pdf pdf_icon

PHD23NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

Datasheet: PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , IRFB4115 , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT .

History: PTA26N60 | MTD3055VL | SIR470DP | AP3R303GMT-L | AP4816GSM | HCFL60R115 | SGSP301

Keywords - PHD23NQ10T MOSFET datasheet

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