PHD34NQ10T Datasheet and Replacement
Type Designator: PHD34NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 227 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: DPAK
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PHD34NQ10T Datasheet (PDF)
phd34nq10t.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 AgRDS(ON) 40 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
phb34nq10t phd34nq10t php34nq10t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 AgRDS(ON) 40 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - PHD34NQ10T MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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