PHD34NQ10T Datasheet. Specs and Replacement

Type Designator: PHD34NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 227 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: DPAK

PHD34NQ10T substitution

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PHD34NQ10T datasheet

 ..1. Size:118K  philips
 phd34nq10t.pdf pdf_icon

PHD34NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 A g RDS(ON) 40 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

 ..2. Size:118K  philips
 phb34nq10t phd34nq10t php34nq10t 1.pdf pdf_icon

PHD34NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 A g RDS(ON) 40 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

Detailed specifications: PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, 10N60, PHD36N03LT, PHD37N06LT, PHD44N06LT, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, PHD82NQ03LT

Keywords - PHD34NQ10T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.