All MOSFET. PHD34NQ10T Datasheet

 

PHD34NQ10T Datasheet and Replacement


   Type Designator: PHD34NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: DPAK
 

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PHD34NQ10T Datasheet (PDF)

 ..1. Size:118K  philips
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PHD34NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 AgRDS(ON) 40 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

 ..2. Size:118K  philips
 phb34nq10t phd34nq10t php34nq10t 1.pdf pdf_icon

PHD34NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 AgRDS(ON) 40 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

Datasheet: PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , IRFB4227 , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT .

History: P0460ATF | QM09N50F | DAC030N120Z1 | SSF2610E | 2SJ74 | TPCA8027-H | FQP3N80

Keywords - PHD34NQ10T MOSFET datasheet

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