All MOSFET. PHD36N03LT Datasheet

 

PHD36N03LT Datasheet and Replacement


   Type Designator: PHD36N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DPAK
 

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PHD36N03LT Datasheet (PDF)

 ..1. Size:92K  philips
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PHD36N03LT

PHD/PHP36N03LTN-channel TrenchMOS logic level FETRev. 02 8 June 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level compatible Low gate charge1.3 Applications DC-to-DC converters Switched-mode power supplies1.4 Quick r

Datasheet: PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , IRFB4110 , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT .

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