PHD36N03LT Datasheet. Specs and Replacement

Type Designator: PHD36N03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: DPAK

PHD36N03LT substitution

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PHD36N03LT datasheet

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PHD36N03LT

PHD/PHP36N03LT N-channel TrenchMOS logic level FET Rev. 02 8 June 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level compatible Low gate charge 1.3 Applications DC-to-DC converters Switched-mode power supplies 1.4 Quick r... See More ⇒

Detailed specifications: PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T, AON6414A, PHD37N06LT, PHD44N06LT, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, PHD82NQ03LT, PHD87N03LT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.