PHD37N06LT Datasheet. Specs and Replacement

Type Designator: PHD37N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: DPAK

PHD37N06LT substitution

- MOSFET ⓘ Cross-Reference Search

 

PHD37N06LT datasheet

 ..1. Size:78K  philips
 php37n06lt phb37n06lt phd37n06lt.pdf pdf_icon

PHD37N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V) g Low thermal... See More ⇒

 ..2. Size:63K  philips
 phd37n06lt.pdf pdf_icon

PHD37N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V) g Low thermal... See More ⇒

Detailed specifications: PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T, PHD36N03LT, IRFB4115, PHD44N06LT, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, PHD82NQ03LT, PHD87N03LT, PHD96NQ03LT

Keywords - PHD37N06LT MOSFET specs

 PHD37N06LT cross reference

 PHD37N06LT equivalent finder

 PHD37N06LT pdf lookup

 PHD37N06LT substitution

 PHD37N06LT replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs