All MOSFET. PHD37N06LT Datasheet

 

PHD37N06LT Datasheet and Replacement


   Type Designator: PHD37N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: DPAK
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PHD37N06LT Datasheet (PDF)

 ..1. Size:78K  philips
 php37n06lt phb37n06lt phd37n06lt.pdf pdf_icon

PHD37N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V)g Low thermal

 ..2. Size:63K  philips
 phd37n06lt.pdf pdf_icon

PHD37N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP37N06LT, PHB37N06LT, PHD37N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 37 A Stable off-state characteristics High thermal cycling performance RDS(ON) 35 m (VGS = 5 V)g Low thermal

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HAF1002 | NTB5404N | TK3A60DA | APL602J | TTP118N08A | HGD750N15M | QS8K13

Keywords - PHD37N06LT MOSFET datasheet

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