PHD66NQ03LT PDF and Equivalents Search

 

PHD66NQ03LT Specs and Replacement


   Type Designator: PHD66NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DPAK
 

 PHD66NQ03LT substitution

   - MOSFET ⓘ Cross-Reference Search

 

PHD66NQ03LT datasheet

 ..1. Size:89K  philips
 phd66nq03lt.pdf pdf_icon

PHD66NQ03LT

PHB/PHD66NQ03LT N-channel TrenchMOS logic level FET Rev. 06 2 August 2004 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications DC-to-DC converters General purpose switching. 1.... See More ⇒

Detailed specifications: PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , 8205A , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , PHN210 , PHP101NQ03LT .

Keywords - PHD66NQ03LT MOSFET specs

 PHD66NQ03LT cross reference
 PHD66NQ03LT equivalent finder
 PHD66NQ03LT pdf lookup
 PHD66NQ03LT substitution
 PHD66NQ03LT replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.