PHD66NQ03LT Datasheet and Replacement
Type Designator: PHD66NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: DPAK
PHD66NQ03LT substitution
PHD66NQ03LT Datasheet (PDF)
phd66nq03lt.pdf

PHB/PHD66NQ03LTN-channel TrenchMOS logic level FETRev. 06 2 August 2004 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications DC-to-DC converters General purpose switching.1.
Datasheet: PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , 2SK3878 , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , PHN210 , PHP101NQ03LT .
History: NVMTS0D6N04C
Keywords - PHD66NQ03LT MOSFET datasheet
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History: NVMTS0D6N04C



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