PHD82NQ03LT Datasheet. Specs and Replacement

Type Designator: PHD82NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DPAK

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PHD82NQ03LT datasheet

 ..1. Size:274K  philips
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PHD82NQ03LT

PHP/PHB/PHD82NQ03LT TrenchMOS logic level FET Rev. 01 28 March 2002 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP82NQ03LT in SOT78 (TO-220AB) PHB82NQ03LT in SOT404 (D2-PAK) PHD82NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatible Low gate ch... See More ⇒

Detailed specifications: PHD34NQ10T, PHD36N03LT, PHD37N06LT, PHD44N06LT, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, IRF630, PHD87N03LT, PHD96NQ03LT, PHD98N03LT, PHN210, PHP101NQ03LT, PHP101NQ04T, PHP108NQ03LT, PHP110NQ06LT

Keywords - PHD82NQ03LT MOSFET specs

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