All MOSFET. PHD82NQ03LT Datasheet

 

PHD82NQ03LT Datasheet and Replacement


   Type Designator: PHD82NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DPAK
 

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PHD82NQ03LT Datasheet (PDF)

 ..1. Size:274K  philips
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PHD82NQ03LT

PHP/PHB/PHD82NQ03LTTrenchMOS logic level FETRev. 01 28 March 2002 Product data1. Product profile1.1 DescriptionN-channel logic level field-effect transistor in a plastic package using TrenchMOStechnology.Product availability:PHP82NQ03LT in SOT78 (TO-220AB)PHB82NQ03LT in SOT404 (D2-PAK)PHD82NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatible Low gate ch

Datasheet: PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , 7N65 , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , PHN210 , PHP101NQ03LT , PHP101NQ04T , PHP108NQ03LT , PHP110NQ06LT .

History: RU1HL13L | BSC066N06NS | TPB65R600M | MP7AN65EC | 6N65KL-TMS2-T | HM26N18K | RFP10N15

Keywords - PHD82NQ03LT MOSFET datasheet

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