All MOSFET. PHD82NQ03LT Datasheet

 

PHD82NQ03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHD82NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DPAK

 PHD82NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD82NQ03LT Datasheet (PDF)

 ..1. Size:274K  philips
 phd82nq03lt.pdf

PHD82NQ03LT PHD82NQ03LT

PHP/PHB/PHD82NQ03LTTrenchMOS logic level FETRev. 01 28 March 2002 Product data1. Product profile1.1 DescriptionN-channel logic level field-effect transistor in a plastic package using TrenchMOStechnology.Product availability:PHP82NQ03LT in SOT78 (TO-220AB)PHB82NQ03LT in SOT404 (D2-PAK)PHD82NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatible Low gate ch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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