PHD82NQ03LT Datasheet and Replacement
Type Designator: PHD82NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DPAK
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PHD82NQ03LT Datasheet (PDF)
phd82nq03lt.pdf

PHP/PHB/PHD82NQ03LTTrenchMOS logic level FETRev. 01 28 March 2002 Product data1. Product profile1.1 DescriptionN-channel logic level field-effect transistor in a plastic package using TrenchMOStechnology.Product availability:PHP82NQ03LT in SOT78 (TO-220AB)PHB82NQ03LT in SOT404 (D2-PAK)PHD82NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatible Low gate ch
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PA606HAG | SHD230409 | AONS66817 | HSM0048 | 2SK3880 | 2SK1446 | 1N60G-TF2-T
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History: PA606HAG | SHD230409 | AONS66817 | HSM0048 | 2SK3880 | 2SK1446 | 1N60G-TF2-T



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