All MOSFET. PHD87N03LT Datasheet

 

PHD87N03LT Datasheet and Replacement


   Type Designator: PHD87N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DPAK
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PHD87N03LT Datasheet (PDF)

 ..1. Size:195K  philips
 phd87n03lt.pdf pdf_icon

PHD87N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V)gRDS(ON) 10.5 m (

 ..2. Size:102K  philips
 phb87n03lt phd87n03lt php87n03lt 5.pdf pdf_icon

PHD87N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V)gRDS(ON) 10.5 m (

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - PHD87N03LT MOSFET datasheet

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