PHD87N03LT Datasheet and Replacement
Type Designator: PHD87N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 620 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DPAK
PHD87N03LT substitution
PHD87N03LT Datasheet (PDF)
phd87n03lt.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V)gRDS(ON) 10.5 m (
phb87n03lt phd87n03lt php87n03lt 5.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP87N03LT, PHB87N03LT Logic level FET PHD87N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance Logic level compatible RDS(ON) 9.5 m (VGS = 10 V)gRDS(ON) 10.5 m (
Datasheet: PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , K3569 , PHD96NQ03LT , PHD98N03LT , PHN210 , PHP101NQ03LT , PHP101NQ04T , PHP108NQ03LT , PHP110NQ06LT , PHP110NQ08LT .
History: NCEP0107AR | IXTM12N50 | KIA65R700 | SL90N20P | NTTFS010N10MCL | GSM4946 | BSZ100N06LS3G
Keywords - PHD87N03LT MOSFET datasheet
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History: NCEP0107AR | IXTM12N50 | KIA65R700 | SL90N20P | NTTFS010N10MCL | GSM4946 | BSZ100N06LS3G



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