All MOSFET. PHD96NQ03LT Datasheet

 

PHD96NQ03LT Datasheet and Replacement


   Type Designator: PHD96NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm
   Package: DPAK
 

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PHD96NQ03LT Datasheet (PDF)

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PHD96NQ03LT

PHD96NQ03LTN-channel TrenchMOS logic level FETRev. 06 15 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Datasheet: PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , 2N7000 , PHD98N03LT , PHN210 , PHP101NQ03LT , PHP101NQ04T , PHP108NQ03LT , PHP110NQ06LT , PHP110NQ08LT , PHP110NQ08T .

History: 2SK788 | AM2394NE | APT6029BLL | APT38N60BC6 | TK15J50D | CEU06N7 | IRFU18N15D

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