All MOSFET. PHD98N03LT Datasheet

 

PHD98N03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHD98N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 111 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
   Package: DPAK

 PHD98N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD98N03LT Datasheet (PDF)

 ..1. Size:85K  philips
 phd98n03lt.pdf

PHD98N03LT PHD98N03LT

PHD98N03LTN-channel TrenchMOS logic level FETRev. 05 1 December 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Low on-state resistance Fast switching1.3 Applications Computer motherboard high-frequency DC-to-DC converters1.4

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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