All MOSFET. PHD98N03LT Datasheet

 

PHD98N03LT Datasheet and Replacement


   Type Designator: PHD98N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 111 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
   Package: DPAK
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PHD98N03LT Datasheet (PDF)

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PHD98N03LT

PHD98N03LTN-channel TrenchMOS logic level FETRev. 05 1 December 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Low on-state resistance Fast switching1.3 Applications Computer motherboard high-frequency DC-to-DC converters1.4

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