PHD98N03LT Datasheet. Specs and Replacement
Type Designator: PHD98N03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 710 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm
Package: DPAK
PHD98N03LT substitution
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PHD98N03LT datasheet
phd98n03lt.pdf
PHD98N03LT N-channel TrenchMOS logic level FET Rev. 05 1 December 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching 1.3 Applications Computer motherboard high-frequency DC-to-DC converters 1.4 ... See More ⇒
Detailed specifications: PHD44N06LT, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, PHD82NQ03LT, PHD87N03LT, PHD96NQ03LT, 2SK3878, PHN210, PHP101NQ03LT, PHP101NQ04T, PHP108NQ03LT, PHP110NQ06LT, PHP110NQ08LT, PHP110NQ08T, PHP112N06T
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