PHN210 Datasheet and Replacement
Type Designator: PHN210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT96-1
PHN210 substitution
PHN210 Datasheet (PDF)
phn210 3.pdf

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL
phn210.pdf

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL
Datasheet: PHD50N06LT , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , 12N60 , PHP101NQ03LT , PHP101NQ04T , PHP108NQ03LT , PHP110NQ06LT , PHP110NQ08LT , PHP110NQ08T , PHP112N06T , PHP119NQ06T .
History: 6N60KG-TN3-R | AM90N06-04M2B | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | UTC654
Keywords - PHN210 MOSFET datasheet
PHN210 cross reference
PHN210 equivalent finder
PHN210 lookup
PHN210 substitution
PHN210 replacement
History: 6N60KG-TN3-R | AM90N06-04M2B | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | UTC654



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