PHN210 Datasheet. Specs and Replacement
Type Designator: PHN210
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 88 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT96-1
PHN210 substitution
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PHN210 datasheet
phn210 3.pdf
Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistor FEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 V d1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V) RDS(ON) 200 m (VGS = 4.5 V) s1 g1 s2 g2 GENERAL ... See More ⇒
phn210.pdf
Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistor FEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 V d1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V) RDS(ON) 200 m (VGS = 4.5 V) s1 g1 s2 g2 GENERAL ... See More ⇒
Detailed specifications: PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, PHD82NQ03LT, PHD87N03LT, PHD96NQ03LT, PHD98N03LT, STP75NF75, PHP101NQ03LT, PHP101NQ04T, PHP108NQ03LT, PHP110NQ06LT, PHP110NQ08LT, PHP110NQ08T, PHP112N06T, PHP119NQ06T
Keywords - PHN210 MOSFET specs
PHN210 cross reference
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