All MOSFET. PHP24N03LT Datasheet

 

PHP24N03LT Datasheet and Replacement


   Type Designator: PHP24N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220AB
 

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PHP24N03LT Datasheet (PDF)

 ..1. Size:54K  philips
 php24n03lt phb24n03lt.pdf pdf_icon

PHP24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V)g Low thermal resistance

 ..2. Size:136K  philips
 php24n03lt.pdf pdf_icon

PHP24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V)g Low thermal resistance

 ..3. Size:44K  philips
 php24n03lt 2.pdf pdf_icon

PHP24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03LT, PHB24N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 24 A Stable off-state characteristics High thermal cycling performance RDS(ON) 56 m (VGS = 5 V)g Low thermal resistance

 6.1. Size:48K  philips
 php24n03t 1.pdf pdf_icon

PHP24N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP24N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 24 Afeatures very low on-state r

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Datasheet: PHP152NQ03LTA , PHP160NQ08T , PHP165NQ08T , PHP174NQ04LT , PHP176NQ04T , PHP21N06T , PHP222NQ04LT , PHP225NQ04T , 5N65 , PHP32N06LT , PHP34NQ11T , PHP36N03LT , PHP45N03LT , PHP45NQ15T , PHP52N06T , PHP54N06T , PHP66NQ03LT .

History: IRFP4110PBF | SSM3J332R | UT75N03 | IRFP4004PBF | NVTFS020N06C | AP09N50I-HF | IPA70R750P7S

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