PHP32N06LT Datasheet. Specs and Replacement
Type Designator: PHP32N06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-220AB
PHP32N06LT substitution
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PHP32N06LT datasheet
php32n06lt php32n06lt phb32n06lt.pdf
PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Logic level compatible. ... See More ⇒
Detailed specifications: PHP160NQ08T, PHP165NQ08T, PHP174NQ04LT, PHP176NQ04T, PHP21N06T, PHP222NQ04LT, PHP225NQ04T, PHP24N03LT, NCEP15T14, PHP34NQ11T, PHP36N03LT, PHP45N03LT, PHP45NQ15T, PHP52N06T, PHP54N06T, PHP66NQ03LT, PHP71NQ03LT
Keywords - PHP32N06LT MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK3592-01S
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