PHP34NQ11T Datasheet and Replacement
Type Designator: PHP34NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-220AB
PHP34NQ11T substitution
PHP34NQ11T Datasheet (PDF)
php34nq11t.pdf

PHP34NQ11TN-channel TrenchMOS standard level FETRev. 01 17 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low on-state resistance Low thermal resistance.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Quick reference data V
phb34nq10t phd34nq10t php34nq10t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 AgRDS(ON) 40 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
Datasheet: PHP165NQ08T , PHP174NQ04LT , PHP176NQ04T , PHP21N06T , PHP222NQ04LT , PHP225NQ04T , PHP24N03LT , PHP32N06LT , 2N7002 , PHP36N03LT , PHP45N03LT , PHP45NQ15T , PHP52N06T , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T .
History: R6020ANX | AFP4435 | AP4424GM-HF | HAT2114RJ | PSMN2R8-80BS | KMD9D0DN30QA | KMD7D5P40QA
Keywords - PHP34NQ11T MOSFET datasheet
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History: R6020ANX | AFP4435 | AP4424GM-HF | HAT2114RJ | PSMN2R8-80BS | KMD9D0DN30QA | KMD7D5P40QA



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