All MOSFET. PHP34NQ11T Datasheet

 

PHP34NQ11T Datasheet and Replacement


   Type Designator: PHP34NQ11T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-220AB
 

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PHP34NQ11T Datasheet (PDF)

 ..1. Size:90K  philips
 php34nq11t.pdf pdf_icon

PHP34NQ11T

PHP34NQ11TN-channel TrenchMOS standard level FETRev. 01 17 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low on-state resistance Low thermal resistance.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Quick reference data V

 6.1. Size:118K  philips
 phb34nq10t phd34nq10t php34nq10t 1.pdf pdf_icon

PHP34NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 35 AgRDS(ON) 40 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

Datasheet: PHP165NQ08T , PHP174NQ04LT , PHP176NQ04T , PHP21N06T , PHP222NQ04LT , PHP225NQ04T , PHP24N03LT , PHP32N06LT , IRFP250 , PHP36N03LT , PHP45N03LT , PHP45NQ15T , PHP52N06T , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T .

History: SI4622DY | VBZL80N03

Keywords - PHP34NQ11T MOSFET datasheet

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